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| PNP BDT82 - BDT84 - BDT86 - BDT88 NPN BDT81 - BDT83 - BDT85 - BDT87 SILICON POWER TRANSISTOR The BDT82 - BDT84 - BDT86 - BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 - BDT83 - BDT85 - BDT87. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO Collector-Emitter Voltage Ratings -IB = 0 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Value 60 80 100 120 60 80 100 120 7 Unit V -VCBO Collector-Base Voltage -IE = 0 V -VEBO Emitter-Base Voltage -IC = 0 V -IC Collector Current 15 A -ICM Collector Peak Current 20 A -IB Base Current 4 A Pt Total Power Dissipation @ TC = 25 125 Watts COMSET SEMICONDUCTORS 1/3 PNP BDT82 - BDT84 - BDT86 - BDT88 NPN BDT81 - BDT83 - BDT85 - BDT87 Symbol TJ Junction Temperature Ratings BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Value 150 Unit C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol RthJa RthJmb Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base Value 70 1 Unit K/W K/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol -ICB0 Ratings Collector Cutoff Current Test Condition(s) -IE=0A , -VCB=60 V -IE=0A , -VCB=80 V -IE=0A , -VCB=100 V -IE=0A , -VCB=120 V -VBE=0 , -VCE= 60V -VBE=0 , -VCE= 80V -VBE=0 , -VCE= 100V -VBE=0 , -VCE= 120V -VEB=7.0 V, -IC=0 Min Typ Mx Unit 0.2 0.2 0.2 0.2 1 1 1 1 0.1 mA -ICES Collector Cutoff Current -IEBO Emitter Cutoff Current BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 mA mA -IC=50 m A , -VCE=10 V 40 - - HFE DC Current Gain (1) -IC=5 A , -VCE=4.0 V 40 - - -IC=5 A , -IB=0.5 A - - 1 V -VCE(SAT) Collector-Emitter saturation Voltage (1) -IC=7 A , -IB=0.7 A - - 1.6 COMSET SEMICONDUCTORS 2/3 PNP BDT82 - BDT84 - BDT86 - BDT88 NPN BDT81 - BDT83 - BDT85 - BDT87 -VBE Base-Emitter voltage (1) -IC=5 A , -VCE=4 V BDT82 BDT84 BDT86 BDT88 - - 1.5 V Symbol -IS/B fT ton Toff Ratings Second breakdown collector current Transition frequency Turn-on time Turn-off time Test Condition(s)Sec -VCE=50 V , tP = 100 ms -VCE=10 V , -IC=0.5 A , f=1 MHz -IC=7 A , -IB1 = IB2 =0.7 A -IC=7 A , -IB1 = IB2 =0.7 A Min Typ Mx Unit 2.5 20 1 2 A MHz s (1) Pulse Duration = 300 s, <= 2% MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Base Collector Emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3 |
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